Design & Simulation of Ultra High Speed GaN Hemt
Publication details: IIITDM Kancheepuram Dept of Electronics Systems 2014Description: xv, 82 pSubject(s): DDC classification:- 621.382.3 NIR
| Item type | Current library | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
Theses and Dissertations
|
IIITDM Kancheepuram Library | 621.382.3 NIR (Browse shelf(Opens below)) | Available | TD00122 |
Total holds: 0
Browsing IIITDM Kancheepuram Library shelves Close shelf browser (Hides shelf browser)
|
|
|
No cover image available | No cover image available |
|
|
||
| 621.382.2/.3 STA Electrical characterization of organic electronic materials and devices | 621.382.3 BAL Advanced Power MOSFET concepts | 621.382.3 COL FinFETs and other multigate transistors | 621.382.3 NIR Design & Simulation of Ultra High Speed GaN Hemt | 621.382.3 SAI Design and simulation of multi-gate field effect transistors | 621.382.3 TIS The MOS transistor | 621.382.323 FOS Fundamentals of ultra-thin-body mosfets and finfets |
M.Des - Theses
There are no comments on this title.